Piotr Jaroszynski

Institute of High Pressure Physics / Process Technician

Piotr Jaroszynski

Institute of High Pressure Physics / Process Technician

Institute of High Pressure Physics5 years

Process Technician現在

- 現在

Full time, gallium nitride (GaN) semiconductor laboratory position. My responsibilities include: - Maintenance & preparation of halide vapor phase epitaxy (HVPE) reactors for gallium nitride (GaN) crystal growth processes

Intern at MOCVD laboratory

Two week internship which focused on gallium nitride (GaN) based Light Emitting Diode (LED) and Laser Diode (LD) production and characterization. The diodes were produced using Metal Organic Vapor Chemical Deposition (MOCVD) technology. Participated in basic characterization of produced diodes using common methods such as electroluminesce

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